vlz-series document number 81759 rev. 1.0, 15-aug-07 vishay semiconductors www.vishay.com 1 9612009 small signal zener diodes features ? very sharp reverse characteristic ? low reverse current level ? very high stability ?low noise ? high reliability ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? voltage stabilization mechanical data case: quadromelf glass case sod80 weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja 300 k/w p tot 500 mw z-current i z p tot /v z ma junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition symbol value unit junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 200 ma v f 1.5 v e2
www.vishay.com 2 document number 81759 rev. 1.0, 15-aug-07 vlz-series vishay semiconductors electrical characteristics part- number- group part- number zener voltage dynamic resistance test current reverse leakage current v z at i zt z z at i zt z zk at i zk i zt i zk i r at v r v v ma ma a v min max max max max vlz2v4 vlz2v4a 2.33 2.52 100 2000 20 1 70 1 vlz2v4b 2.43 2.63 100 2000 20 1 70 1 vlz2v7 vlz2v7a 2.54 2.75 100 1000 20 1 50 1 vlz2v7b 2.69 2.91 100 1000 20 1 50 1 vlz3v0 vlz3v0a 2.85 3.07 80 1000 20 1 50 1 vlz3v0b 3.01 3.22 80 1000 20 1 10 1 vlz3v3 vlz3v3a 3.16 3.38 70 1000 20 1 10 1 vlz3v3b 3.32 3.53 70 1000 20 1 10 1 vlz3v6 vlz3v6a 3.455 3.695 60 1000 20 1 5 1 vlz3v6b 3.6 3.845 60 1000 20 1 5 1 vlz3v9 vlz3v9a 3.74 4.01 50 1000 20 1 3 1 vlz3v9b 3.89 4.16 50 1000 20 1 3 1 vlz4v3 vlz4v3a 4.04 4.29 40 1000 20 1 3 1 vlz4v3b 4.17 4.43 40 1000 20 1 3 1 vlz4v3c 4.3 4.57 40 1000 20 1 3 1 vlz4v7 vlz4v7a 4.44 4.68 25 900 20 1 10 2 vlz4v7b 4.55 4.8 25 900 20 1 6 2 vlz4v7c 4.68 4.93 25 900 20 1 3 2 vlz5v1 vlz5v1a 4.81 5.07 20 800 20 1 2 2 vlz5v1b 4.94 5.2 20 800 20 1 2 2 vlz5v1c 5.09 5.37 20 800 20 1 2 2 vlz5v6 vlz5v6a 5.28 5.55 13 500 20 1 1 2 vlz5v6b 5.45 5.73 13 500 20 1 1 2 vlz5v6c 5.61 5.91 13 500 20 1 1 2 vlz6v2 vlz6v2a 5.78 6.09 10 300 20 1 3 4 vlz6v2b 5.96 6.27 10 300 20 1 3 4 vlz6v2c 6.12 6.44 10 300 20 1 3 4 vlz6v8 vlz6v8a 6.29 6.63 8 150 20 0.5 2 4 vlz6v8b 6.49 6.83 8 150 20 0.5 2 4 vlz6v8c 6.66 7.01 8 150 20 0.5 2 4 vlz7v5 vlz7v5a 6.85 7.22 8 120 20 0.5 3 6.5 vlz7v5b 7.07 7.45 8 120 20 0.5 3 6.73 vlz7v5c 7.29 7.67 8 120 20 0.5 3 6.93 vlz8v2 vlz8v2a 7.53 7.92 8 120 20 0.5 7.5 7.15 vlz8v2b 7.78 8.19 8 120 20 0.5 7.5 7.39 vlz8v2c 8.03 8.45 8 120 20 0.5 7.5 7.63 vlz9v1 vlz9v1a 8.29 8.73 8 120 20 0.5 0.04 7.88 vlz9v1b 8.57 9.01 8 120 20 0.5 0.04 8.14 vlz9v1c 8.83 9.3 8 120 20 0.5 0.04 8.39 vlz10 vlz10a 9.12 9.59 8 120 20 0.5 0.04 8.66 vlz10b 9.41 9.9 8 120 20 0.5 0.04 8.94 vlz10c 9.7 10.2 8 120 20 0.5 0.04 9.22 vlz10d 9.94 10.44 8 120 20 0.5 0.04 9.44 vlz11 vlz11a 10.18 10.71 10 120 10 0.5 0.04 9.67 vlz11b 10.5 11.05 10 120 10 0.5 0.04 9.98 vlz11c 10.82 11.38 10 120 10 0.5 0.04 10.28
vlz-series document number 81759 rev. 1.0, 15-aug-07 vishay semiconductors www.vishay.com 3 vlz12 vlz12a 11.13 11.71 12 110 10 0.5 0.04 10.6 vlz12b 11.44 12.03 12 110 10 0.5 0.04 10.9 vlz12c 11.74 12.35 12 110 10 0.5 0.04 11.2 vlz13 vlz13a 12.11 12.75 14 110 10 0.5 0.04 11.5 vlz13b 12.55 13.21 14 110 10 0.5 0.04 11.9 vlz13c 12.99 13.66 14 110 10 0.5 0.04 12.3 vlz15 vlz15a 13.44 14.13 16 110 10 0.5 0.04 12.8 vlz15b 13.89 14.62 16 110 10 0.5 0.04 13.2 vlz15c 14.35 15.09 16 110 10 0.5 0.04 13.6 vlz16 vlz16a 14.8 15.57 18 150 10 0.5 0.04 14.1 vlz16b 15.25 16.04 18 150 10 0.5 0.04 14.5 vlz16c 15.69 16.51 18 150 10 0.5 0.04 14.9 vlz18 vlz18a 16.22 17.06 23 150 10 0.5 0.04 15.4 vlz18b 16.82 17.7 23 150 10 0.5 0.04 16 vlz18c 17.42 18.33 23 150 10 0.5 0.04 16.5 vlz20 vlz20a 18.02 18.96 28 200 10 0.5 0.04 17.1 vlz20b 18.63 19.59 28 200 10 0.5 0.04 17.7 vlz20c 19.23 20.22 28 200 10 0.5 0.04 18.3 vlz20d 19.72 20.72 28 200 10 0.5 0.04 18.7 vlz22 vlz22a 20.15 21.2 30 200 5 0.5 0.04 19.1 vlz22b 20.64 21.71 30 200 5 0.5 0.04 19.6 vlz22c 21.08 22.17 30 200 5 0.5 0.04 20 vlz22d 21.52 22.63 30 200 5 0.5 0.04 20.4 vlz24 vlz24a 22.05 23.18 35 200 5 0.5 0.04 20.9 vlz24b 22.61 23.77 35 200 5 0.5 0.04 21.5 vlz24c 23.12 24.31 35 200 5 0.5 0.04 22 vlz24d 23.63 24.85 35 200 5 0.5 0.04 22.4 vlz27 vlz27a 24.26 25.52 45 250 5 0.5 0.04 23 vlz27b 24.97 26.26 45 250 5 0.5 0.04 23.7 vlz27c 25.63 26.95 45 250 5 0.5 0.04 24.3 vlz27d 26.29 27.64 45 250 5 0.5 0.04 25 vlz30 vlz30a 26.99 28.39 55 250 5 0.5 0.04 25.6 vlz30b 27.7 29.13 55 250 5 0.5 0.04 26.3 vlz30c 28.36 29.82 55 250 5 0.5 0.04 26.9 vlz30d 29.02 30.51 55 250 5 0.5 0.04 27.6 vlz33 vlz33a 29.68 31.22 65 250 5 0.5 0.04 28.2 vlz33b 30.32 31.88 65 250 5 0.5 0.04 28.8 vlz33c 30.9 32.5 65 250 5 0.5 0.04 29.4 vlz33d 31.49 33.11 65 250 5 0.5 0.04 29.9 vlz36 vlz36a 32.14 33.79 75 250 5 0.5 0.04 30.5 vlz36b 32.79 34.49 75 250 5 0.5 0.04 31.2 vlz36c 33.4 35.13 75 250 5 0.5 0.04 31.7 vlz36d 34.01 35.77 75 250 5 0.5 0.04 32.3 part- number- group part- number zener voltage dynamic resistance test current reverse leakage current v z at i zt z z at i zt z zk at i zk i zt i zk i r at v r v v ma ma a v min max max max max
www.vishay.com 4 document number 81759 rev. 1.0, 15-aug-07 vlz-series vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified vlz39 vlz39a 34.68 36.47 85 250 5 0.5 0.04 32.9 vlz39b 35.36 37.19 85 250 5 0.5 0.04 33.6 vlz39c 36 37.85 85 250 5 0.5 0.04 34.2 vlz39d 36.63 38.52 85 250 5 0.5 0.04 34.8 vlz39e 37.36 39.29 85 250 5 0.5 0.04 35.5 vlz39f 38.14 40.11 85 250 5 0.5 0.04 36.2 vlz39g 38.94 40.8 85 250 5 0.5 0.04 37 vlz43 vlz43 40 45 90 - 5 - 0.04 38 vlz47 vlz47 44 49 90 - 5 - 0.04 41.8 vlz51 vlz51 48 54 100 - 5 - 0.04 45.6 vlz56 vlz56 53 60 100 - 5 - 0.04 50.4 part- number- group part- number zener voltage dynamic resistance test current reverse leakage current v z at i zt z z at i zt z zk at i zk i zt i zk i r at v r v v ma ma a v min max max max max figure 1. total power dissipati on vs. ambient temperature figure 2. typical change of work ing voltage under operating conditions at t amb = 25c 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 8 0 40 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 959 8 t j = 25 c i z = 5 ma 0 5 figure 3. typical change of working voltage vs. junction temperature figure 4. temperature coefficient of vz vs. z-voltage - 60 60 120 1 8 0 0. 8 0.9 1.0 1.1 1.2 1.3 v ztn - relati v e v oltage change t j - j u nction temperat u re (c) 240 95 9599 0 v ztn = v zt / v z (25 c) 0 tk v z = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k 30 - 5 0 5 10 15 v z - z- v oltage ( v ) 50 95 9600 40 i z = 5 ma 10 20 0 tk v z - temperat u re coefficient of v z (10 -4 /k)
vlz-series document number 81759 rev. 1.0, 15-aug-07 vishay semiconductors www.vishay.com 5 figure 5. diode capacitance vs. z-voltage figure 6. forward current vs. forward voltage figure 7. z-current vs. z-voltage 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 0 0.2 0.4 0.6 0. 8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c 8 20 95 9604 0 20 40 60 8 0 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) figure 8. z-current vs. z-voltage figure 9. differential z-resistance vs. z-voltage 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c 0 5 10 15 20 1 10 100 1000 25 95 9606 tj = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance ( )
www.vishay.com 6 document number 81759 rev. 1.0, 15-aug-07 vlz-series vishay semiconductors package dimensions in millimeters (inches) : quadromelf sod80 figure 10. thermal response 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t jmax - t am b i zm = (- v z + (v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj ) 96 12071
vlz-series document number 81759 rev. 1.0, 15-aug-07 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vis hay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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